2sC5390 silicon npn epitaxial high frequency amplifier ade-208-492 (z) 1st. edition december. 1996 features excellent high frequency characteristics f t = 1.4ghz (typ.) low output capacitance c ob = 2.4 pf (typ.) isolated package to?26fm outline to?26fm 1. emitter 2. collector 3. base 1 2 3 datasheet.in
2sC5390 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 110 v collector to emitter voltage v ceo 110 v emitter to base voltage v ebo 3v collector current i c 200 ma collector peak current i c(peak) 400 ma collector power dissipation p c 1.4 w collector power dissipation p c * 1 7w junction temperature tj 150 ? storage temperature tstg ?5 to +150 ? note: 1. value at tc = 25? electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 110 v i c = 10??, i e = 0 collector to emitter breakdown voltage v (br)ceo 110 v i c = 1ma, r be = collector cutoff current i cbo 10 m av cb = 100v, i e = 0 emitter cutoff current i ebo 10 m av e b = 3v, i c = 0 dc current transfer ratio h fe 30 100 v ce = 10 v, i c = 10ma base to emitter voltage v be 1 v v ce = 10 v, i c = 10ma collector to emitter saturation voltage v ce(sat) 1 v i c = 200ma, i b = 20ma gain bandwidth product f t 1.0 1.4 ghz v ce = 10 v, i c = 50ma collector output capacitance c ob 2.4 3.5 pf v cb = 30v, i e = 0 f = 1mhz datasheet.in
2sC5390 main characteristics 8 6 4 2 0 50 100 150 200 200 100 0510 500 200 100 50 20 10 5 1 51020 50 2 1000 300 100 30 10 3 1 1 3 10 30 100 300 1000 10 ms ic(peak) i max c dc operation (tc = 25 c) 1 shot pulse ta = 25 c pw = 1 ms 10 ma 9 ma 8 ma 7 ma 5 ma 4 ma 3 ma 2 ma 1 ma 6 ma i = 0 b 100 200 75 c 25 c ta = ?5 c collector power dissipation pc (w) ambient temperature ta ( c) case temperature tc ( c) collector power dissipation vs. temperature collector to emitter voltage v ce (v) collector current i (ma) c typical output characteristics ta = 25 c pulse test dc current transfer ratio h fe collector current i c (ma) dc current transfer ratio vs. collector current v = 10 v pulse test ce collector current i (ma) collector to emitter voltage v ce (v) c areaof safe operaion ta tc datasheet.in
2sC5390 1 0.5 0.2 0.1 1 10 20 100 200 2 0.05 0.02 0.01 550 75 c 25 c ta = ?5 c 1 10 20 100 200 25 50 5 2 1 0.5 0.2 0.1 1 10 20 100 200 25 50 5 2 1 0.5 0.2 0.1 75 c 25 c ta = ?5 c v = 10 v pulse test ce 0.1 1 2 5 10 20 50 100 collector to base voltage v cb (v) collector output capacintace cob (pf) 0.2 0.5 1 2 5 collctor output capacitance vs. collector to base voltage 10 i = 0 , f = 1mhz e collector to emitter saturation voltage ce(sat) v (v) collector current i c (ma) collector to emitter saturation voltage vs. collector current collector current i c (ma) base to emitter saturation voltage v (v) be(sat) base to emitter saturation voltage vs. collector current collector current i c (ma) gain bandwidth f (mhz) t gain bandwidth vs. collector current i / i = 10 pulse test c b i / i = 10 pulse test c b datasheet.in
2sC5390 package dimentions unit: mm 8.0 0.4 6.0 1.0 11.0 0.5 15.6 0.5 0.65 2.29 0.5 2.29 0.5 0.7 1.7 1.9 max 3.5 3.2 f +0.15 ?.1 3.2 0.4 hitachi code eiaj jedec to?26fm datasheet.in
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